Devices for integrated circuits: silicon and III - V compound semiconductors
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Wiley
1999
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 512 S. Ill. |
| ISBN: | 0471171344 |
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Datensatz im Suchindex
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| adam_text | DEVICES FOR INTEGRATED CIRCUITS SILICON ANDLLL-V COMPOUND SEMICONDUCTORS
H. CRAIG CASEY, JR. DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
DUKE UNIVERSITY JOHN WILEY & SONS, INC. NEW YORK * CHICHESTER * WEINHEIM
* BRISBANE * SINGAPORE * TORONTO CONTENTS CHAPTER 1 INTEGRATED CIRCUIT
FAMILY TREE 1.1 THE EARLY YEARS 1 1.2 TRANSISTOR INVENTION 3 1.3 THE
INTEGRATED CIRCUIT 6 REFERENCES 10 CHAPTER 2 ELECTRONS IN SOLIDS 12 2.1
INTRODUCTION 12 2.2 THE HYDROGEN ATOM 13 2.3 SCHRODINGER WAVE EQUATION
16 2.3.1 THE WAVE EQUATION 16 2.3.2 FREE-ELECTRON SOLUTION 16 2.4
ELECTRONS IN CRYSTALS 19 2.4.1 CRYSTAL STRUCTURE 19 2.4.2 ENERGY BANDS
IN SOLIDS 23 2.4.3 THE E VS. K DIAGRAM FOR A ONE-DIMENSIONAL CRYSTAL 23
2.4.4 THE E VS. K DIAGRAM FOR GALLIUM ARSENIDE AND SILICON 26 2.4.5 WAVE
PACKETS 28 2.4.6 EFFECTIVE MASS 28 IX CONTENTS 2.5 DENSITY OF ELECTRON
ENERGY STATES 32 2.6 THE EFFECTIVE DENSITY OF STATES 35 2.6.1 THE
FERMI-DIRAC DISTRIBUTION FUNCTION 35 2.6.2 THE ELECTRON CONCENTRATION 36
2.7 THE INTRINSIC CARRIER CONCENTRATION 41 2.7.1 THE INTRINSIC
SEMICONDUCTOR 41 2.7.2 THE ENERGY GAP 42 2.7.3 EFFECTIVE MASS VALUES 46
2.7.4 INTRINSIC CARRIER CONCENTRATION VALUES 50 2.8 DONORS AND ACCEPTORS
52 2.8.1 DONOR AND ACCEPTOR IONIZATION ENERGIES 52 2.8.2 MAJORITY AND
MINORITY CARRIERS 54 2.8.3 INTRINSIC FERMI LEVEL 57 2.9 SUMMARY AND
USEFUL EXPRESSIONS 58 REFERENCES 60 PROBLEMS 62 APPENDIX A 66 A.I DONOR
AND ACCEPTOR IONIZATION 66 A.2 CONCENTRATION DEPENDENCE OF IONIZATION
ENERGY 67 CHAPTER 3 CARRIER TRANSPORT AND RECOMBINATION 69 3.1
INTRODUCTION 69 3.2 CARRIER DRIFT 70 3.2.1 MOBILITY 70 3.2.2 RESISTIVITY
76 3.2.3 INTEGRATED-CIRCUIT RESISTORS 79 3.2.4 APPLICATION OF SPICE TO
INTEGRATED-CIRCUIT RESISTORS 83 3.2.5 RESISTIVITY TEMPERATURE DEPENDENCE
86 3.3 CARRIER DIFFUSION 87 3.3.1 THE DIFFUSION PROCESS 87 3.3.2 THE
CURRENT-DENSITY EQUATIONS 88 3.3.3 THE EINSTEIN RELATION 89 3.3.4
EXCESS-CARRIER CONCENTRATIONS 90 3.4 THE CONTINUITY EQUATION 91 3.5
CARRIER RECOMBINATION 94 3.5.1 INTRODUCTORY COMMENTS 94 3.5.2
SHOCKLEY-HALL-READ RECOMBINATION 94 3.5.3 RADIATIVE RECOMBINATION 97
3.5.4 AUGER RECOMBINATION 99 CONTENTS XI 3.6 THE BASIC EQUATIONS 102 3.7
_ CONTINUITY EQUATION EXAMPLES 102 3.7.1 TRANSIENT RESPONSE 102 3.7.2
STEADY-STATE INJECTION FROM ONE SIDE 104 3.7.3 SURFACE RECOMBINATION 106
3.8 HIGH FIELD EFFECTS 108 3.9 SUMMARY AND USEFUL EXPRESSIONS 110
REFERENCES 112 PROBLEMS 115 APPENDIX B 120 B.I SHOCKLEY-HALL-READ
RECOMBINATION 120 B.2 RADIATIVE RECOMBINATION 124 CHAPTER 4 P-N
JUNCTIONS: I-V BEHAVIOR 128 4.1 INTRODUCTION 128 4.2 ENERGY-BAND DIAGRAM
130 4.3 JUNCTION POTENTIAL 133 4.4 DEPLETION WIDTH 138 4.5 RELATION
BETWEEN POTENTIAL AND CARRIER CONCENTRATION 141 4.6 P-N JUNCTION WITH
BIAS 144 4.6.1 QUASI-FERMI LEVEL 144 4.6.2 ENERGY-BAND DIAGRAM AT
NONEQUILIBRIUM 146 4.6.3 MINORITY CARRIER CONCENTRATIONS AT THE
DEPLETION BOUNDARIES 148 4.7 I-V CHARACTERISTICS FOR P-N JUNCTION 149 ,
4.7.1 MINORITY CARRIER CONCENTRATION VARIATIONS 149 4.7.2 DIFFUSION
CURRENT 154 4.7.3 DIFFUSION CURRENT FOR THE THIN-LAYER CASE 160 4.7.4
MINORITY CARRIER MOBILITY 162 4.7.5 SPACE-CHARGE RECOMBINATION CURRENT
163 4.7.6 SURFACE-RECOMBINATION CURRENT 167 4.7.7 HIGH CURRENT EFFECTS
168 4.7.8 REVERSE BIAS 169 4.7.9 TEMPERATURE EFFECTS 171 4.8 SUMMARY AND
USEFUL EXPRESSIONS 173 REFERENCES 174 PROBLEMS 175 XII CONTENTS CHAPTER
5 P-N JUNCTIONS: REVERSE BREAKDOWN AND JUNCTION CAPACITANCE 181 5.1
INTRODUCTION 181 5.2 AVALANCHE BREAKDOWN 182 5.3 TUNNELING 190 5.4
JUNCTION CAPACITANCE 192 5.4.1 ABRUPT-JUNCTION DEPLETION CAPACITANCE 192
5.4.2 LINEARLY GRADED JUNCTION DEPLETION CAPACITANCE 195 5.4.3 DIFFUSION
CAPACITANCE 197 5.5 SPICE MODEL FOR P-N JUNCTIONS 200 5.5.1 ELEMENT AND
MODEL LINES 200 5.5.2 SPICE2 AND PSPICE MODEL PARAMETERS 202 5.5.3
ADDITIONAL PSPICE P-N JUNCTION DIODE MODEL PARAMETERS 204 5.5.4
TRANSIENT ANALYSIS 209 5.6 APPLICATIONS 211 5.6.1 PLANAR P-N JUNCTION
DIODE 211 5.6.2 MICROWAVE DIODES 212 5.6.3 OPTOELECTRONIC DIODES 213
5.6.4 HETEROJUNCTION DIODES 215 5.7 SUMMARY AND USEFUL EXPRESSIONS 218
REFERENCES 219 PROBLEMS 220 CHAPTER 6 SCHOTTKY-BARRIER DEVICES 226 6.1
INTRODUCTION 226 6.2 ENERGY-BAND DIAGRAM 227 6.3 DEPLETION WIDTH 231 6.4
DEPLETION CAPACITANCE 235 6.5 CURRENT-VOLTAGE CHARACTERISTICS 238 6.5.1
THEORY 238 6.5.2 APPLICATIONS 242 6.6 OHMIC CONTACTS 243 6.7 THE MESFET
246 6.7.1 INTRODUCTORY DESCRIPTION 246 6.7.2 THRESHOLD VOLTAGE 248 6.7.3
I D -V DS DC CHARACTERISTICS FOR SMALL V DS 249 6.7.4 ID-VDS DC
CHARACTERISTICS FOR ARBITRARY V DS 250 CONTENTS XIII 6.7.5 SMALL-SIGNAL
AC MODEL 253 6.7.6 MODFET OR HEMT 256 6.8 PSPICE MESFET MODEL 258 6.8.1
ELEMENT AND MODEL LINES 258 6.8.2 PSPICE MODEL PARAMETERS 259 6.9
APPLICATIONS 264 6.10 SUMMARY AND USEFUL EXPRESSIONS 267 REFERENCES 268
PROBLEMS 269 CHAPTER 7 MOS CAPACITORS 273 7.1 INTRODUCTION 273 7.2 IDEAL
MOS CAPACITOR 277 7.2.1 THERMAL-EQUILIBRIUM ENERGY-BAND DIAGRAM 277
7.2.2 IDEAL FLAT-BAND VOLTAGE 281 7.2.3 GATE BIAS VOLTAGES FOR | V C | *
V FB 281 7.2.4 MAXIMUM DEPLETION WIDTH X DMAX 285 7.3 THRESHOLD VOLTAGE
V T 290 7.3.1 THRESHOLD CONDITION 290 7.3.2 THRESHOLD SURFACE POTENTIAL
291 7.3.3 INVERSION BY CARRIER GENERATION 293 7.3.4 THE ELECTRIC FIELD
AND POTENTIAL 294 7.3.5 IDEAL OXIDE THRESHOLD VOLTAGE V T 296 7.3.6
NONIDEAL OXIDE THRESHOLD VOLTAGE V T 298 7.4 DIFFERENTIAL MOS
CAPACITANCE 302 7.4.1 IDEAL OXIDE MOS CAPACITANCE-VOLTAGE BEHAVIOR 302
7.4.2 IDEAL OXIDE MOS CAPACITANCE-VOLTAGE BEHAVIOR EXAMPLES 308 7.4.3
MOS CAPACITANCE MEASUREMENTS 314 7.4.4 NONIDEAL OXIDE
CAPACITANCE-VOLTAGE BEHAVIOR 316 7.5 CHARGE-COUPLED DEVICES 318 7.5.1
BASIC STRUCTURE 318 7.5.2 CHARGE-COUPLED DEVICE IMAGING 322 7.6 SUMMARY
AND USEFUL EXPRESSIONS 322 REFERENCES 324 PROBLEMS 326 APPENDIX C 331
C.I INVERSION LAYER THICKNESS 331 C.2 MOS CAPACITANCE 335 XIV CONTENTS
CHAPTER 8 MOS FIELD-EFFECT TRANSISTORS 342 8.1 INTRODUCTION 342 8.2 I D
-VDS DC CHARACTERISTICS 344 8.2.1 BASIC MOSFET MODEL 344 8.2.2 SMALL V
DS 0.1V 349 8.2.3 SPICE LEVEL 1 MOSFET MODEL 351 8.2.4 SPICE LEVEL 2
MOSFET MODEL 355 8.2.5 DRAIN CURRENT IN THE SATURATION REGION 358 8.2.6
SUBSTRATE BIAS 360 8.3 TYPES OF MOSFETS 361 8.4 SPICE MODEL 363 8.4.1
ELEMENT AND MODEL LINES 363 8.4.2 SPICE2 AND PSPICE DC PARAMETERS 364
8.4.3 PSPICE BSIM MODELS 374 8.4.4 OTHER SPICE MODELS 374 8.5
SMALL-SIGNAL AC MODEL 375 8.5.1 EQUIVALENT CIRCUIT 375 8.5.2 CUTOFF
FREQUENCY F T 381 8.6 SUBTHRESHOLD CURRENT BEHAVIOR 382 8.6.1
SUBTHRESHOLD DRAIN CURRENT 382 8.6.2 GATE VOLTAGE SWING PARAMETER 5 387
8.7 MOSFET MINIATURIZATION 391 8.7.1 GENERAL COMMENTS 391 8.7.2 SCALING
393 8.7.3 EMPIRICAL FORMULA 394 8.7.4 OTHER MINIATURIZATION TECHNIQUES
395 8.7.5 RELIABILITY 397 8.8 MOSFET INTEGRATED-CIRCUIT SPICE EXAMPLES
398 8.8.1 NMOS INVERTER 398 8.8.2 CMOS INVERTER 402 8.8.3 BICMOS 406 8.9
SUMMARY AND USEFUL EXPRESSIONS 406 REFERENCES 408 PROBLEMS 411 APPENDIX
D 417 D.I RESISTANCE AND CHARGE-STORAGE PARAMETERS 417 D.2 NOISE
PARAMETERS 423 D.3 ADDITIONAL PSPICE MOSFET MODEL PARAMETERS 424
CONTENTS XV CHAPTER 9 BIPOLAR TRANSISTORS 427 9.1 INTRODUCTION 427 9.2
COMMON-BASE CONFIGURATION 429 9.2.1 BASIC OPERATION 429 9.2.2 CURRENT
GAIN 431 9.3 CURRENTS IN THE COMMON-BASE CONFIGURATION 434 9.3.1 CARRIER
DISTRIBUTION IN BASE 434 9.3.2 EMITTER-BASE CURRENT 436 9.3.3 BASE
RECOMBINATION CURRENT 437 9.3.4 COLLECTOR CURRENT 438 9.3.5 GUMMEL
NUMBER 439 9.3.6 EVALUATION OF A 0 439 9.3.7 MODES OF OPERATION 441
9.3.8 I-V CHARACTERISTICS 442 9.4 COMMON-EMITTER CONFIGURATION 444 9.4.1
TRANSISTOR/3 444 9.4.2 I-V CHARACTERISTICS 446 9.5 EBERS-MOLL MODEL 449
9.5.1 BASIC MODEL 449 9.5.2 SPICE CONFIGURATION 452 9.6 SMALL-SIGNAL AC
MODEL 455 9.6.1 EQUIVALENT CIRCUIT 455 9.6.2 CUTOFF FREQUENCY FR 458 9.7
SPICE MODEL FOR BIPOLAR TRANSISTORS 460 9.7.1 ELEMENT AND MODEL LINES
460 9.7.2 SPICE DC MODEL PARAMETERS 461 9.7.3 RESISTANCE AND
CHARGE-STORAGE PARAMETERS 465 9.7.4 NOISE PARAMETERS 469 9.7.5
ADDITIONAL PSPICE BIPOLAR TRANSISTOR MODEL PARAMETERS 469 9.8
APPLICATIONS 472 9.8.1 BIPOLAR TRANSISTOR STRUCTURE 472 9.8.2
DIFFERENTIAL-AMPLIFIER PAIR EXAMPLE 472 9.8.3 QUALITATIVE DESCRIPTION OF
CIRCUIT OPERATION 472 9.9 HETEROJUNCTION BIPOLAR TRANSISTORS 476 9.10
SUMMARY AND USEFUL EXPRESSIONS 478 REFERENCES 479 PROBLEMS 480 APPENDIX
E 488 E.I MAXIMUM FREQUENCY OF OSCILLATION F MAX 488 XVI CONTENTS
APPENDIX I INTRODUCTION TO PSPICE 491 1.1 GENERAL DESCRIPTION 491 1.2
CIRCUIT DESCRIPTION 492 1.2.1 DC VOLTAGE AND CURRENT SOURCES 493 1.2.2
DC CURRENT MEASUREMENT 493 1.2.3 PIECEWISE LINEAR SOURCE 494 1.2.4 PULSE
SOURCE 494 1.2.5 SINUSOIDAL SOURCE 494 1.3 ANALYSIS DESCRIPTION 495
1.3.1 DC ANALYSIS 495 1.3.2 TRANSIENT ANALYSIS 496 1.3.3 AC ANALYSIS 496
1.4 .PROBE 496 1.4.1 PROBE ON PC WITH WINDOWS 95 497 INDEX 503
|
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| language | English |
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| spelling | Casey, H. Craig Verfasser aut Devices for integrated circuits silicon and III - V compound semiconductors H. Craig Casey New York [u.a.] Wiley 1999 XVI, 512 S. Ill. txt rdacontent n rdamedia nc rdacarrier CIRCUITOS INTEGRADOS larpcal SEMICONDUTORES larpcal Compound semiconductors Integrated circuits Computer simulation Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009084312&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Casey, H. Craig Devices for integrated circuits silicon and III - V compound semiconductors CIRCUITOS INTEGRADOS larpcal SEMICONDUTORES larpcal Compound semiconductors Integrated circuits Computer simulation Verbindungshalbleiter (DE-588)4062623-4 gnd |
| subject_GND | (DE-588)4062623-4 |
| title | Devices for integrated circuits silicon and III - V compound semiconductors |
| title_auth | Devices for integrated circuits silicon and III - V compound semiconductors |
| title_exact_search | Devices for integrated circuits silicon and III - V compound semiconductors |
| title_full | Devices for integrated circuits silicon and III - V compound semiconductors H. Craig Casey |
| title_fullStr | Devices for integrated circuits silicon and III - V compound semiconductors H. Craig Casey |
| title_full_unstemmed | Devices for integrated circuits silicon and III - V compound semiconductors H. Craig Casey |
| title_short | Devices for integrated circuits |
| title_sort | devices for integrated circuits silicon and iii v compound semiconductors |
| title_sub | silicon and III - V compound semiconductors |
| topic | CIRCUITOS INTEGRADOS larpcal SEMICONDUTORES larpcal Compound semiconductors Integrated circuits Computer simulation Verbindungshalbleiter (DE-588)4062623-4 gnd |
| topic_facet | CIRCUITOS INTEGRADOS SEMICONDUTORES Compound semiconductors Integrated circuits Computer simulation Verbindungshalbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009084312&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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