CMOS circuit design, layout, and simulation:
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York, NY
IEEE Press
1998
|
| Schriftenreihe: | IEEE Press series on microelectronic systems
|
| Schlagworte: | |
| Beschreibung: | XXIV, 902 S. graph. Darst. |
| ISBN: | 0780334167 |
Internformat
MARC
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| 246 | 1 | 3 | |a CMOS |
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| 650 | 4 | |a Circuitos integrados - Disen̋o y construcción | |
| 650 | 4 | |a Semiconductores de metal-oxido complementarios - Disen̋o y construcción | |
| 650 | 4 | |a Transistores de efecto de campo metal-oxido semiconductores | |
| 650 | 4 | |a Integrated circuit layout | |
| 650 | 4 | |a Integrated circuits |x Design and construction | |
| 650 | 4 | |a Metal oxide semiconductor field-effect transistors | |
| 650 | 4 | |a Metal oxide semiconductors, Complementary |x Design and construction | |
| 650 | 0 | 7 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a CMOS |0 (DE-588)4010319-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |2 gnd |9 rswk-swf |
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| 650 | 0 | 7 | |a Entwurf |0 (DE-588)4121208-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a CMOS-Schaltung |0 (DE-588)4148111-2 |2 gnd |9 rswk-swf |
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| 689 | 3 | 0 | |a CMOS-Schaltung |0 (DE-588)4148111-2 |D s |
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| 689 | 3 | |8 1\p |5 DE-604 | |
| 689 | 4 | 0 | |a CMOS |0 (DE-588)4010319-5 |D s |
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Datensatz im Suchindex
| _version_ | 1813071879724859392 |
|---|---|
| adam_text | |
| any_adam_object | |
| author | Baker, Russel Jacob 1964- Li, Harry W. Boyce, David E. 1940- |
| author_GND | (DE-588)138111715 (DE-588)129417866 |
| author_facet | Baker, Russel Jacob 1964- Li, Harry W. Boyce, David E. 1940- |
| author_role | aut aut aut |
| author_sort | Baker, Russel Jacob 1964- |
| author_variant | r j b rj rjb h w l hw hwl d e b de deb |
| building | Verbundindex |
| bvnumber | BV011763796 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.99.M44 |
| callnumber-search | TK7871.99.M44 |
| callnumber-sort | TK 47871.99 M44 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4960 |
| classification_tum | ELT 272f ELT 357f |
| ctrlnum | (OCoLC)889752631 (DE-599)BVBBV011763796 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV011763796 |
| illustrated | Illustrated |
| indexdate | 2024-10-16T12:01:25Z |
| institution | BVB |
| isbn | 0780334167 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007937791 |
| oclc_num | 889752631 |
| open_access_boolean | |
| owner | DE-29T DE-91 DE-BY-TUM DE-Aug4 DE-858 |
| owner_facet | DE-29T DE-91 DE-BY-TUM DE-Aug4 DE-858 |
| physical | XXIV, 902 S. graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | IEEE Press |
| record_format | marc |
| series2 | IEEE Press series on microelectronic systems |
| spelling | Baker, Russel Jacob 1964- Verfasser (DE-588)138111715 aut CMOS circuit design, layout, and simulation R. Jacob Baker, Harry W. Li and David E. Boyce CMOS New York, NY IEEE Press 1998 XXIV, 902 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier IEEE Press series on microelectronic systems CIRCUITOS INTEGRADOS larpcal Circuitos integrados - Disen̋o y construcción Semiconductores de metal-oxido complementarios - Disen̋o y construcción Transistores de efecto de campo metal-oxido semiconductores Integrated circuit layout Integrated circuits Design and construction Metal oxide semiconductor field-effect transistors Metal oxide semiconductors, Complementary Design and construction Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf CMOS (DE-588)4010319-5 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf Entwurf (DE-588)4121208-3 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf CMOS-Schaltung (DE-588)4148111-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 s DE-604 Integrierte Schaltung (DE-588)4027242-4 s Entwurf (DE-588)4121208-3 s CMOS (DE-588)4010319-5 s Schaltungsentwurf (DE-588)4179389-4 s CMOS-Schaltung (DE-588)4148111-2 s 1\p DE-604 Simulation (DE-588)4055072-2 s 2\p DE-604 Li, Harry W. Verfasser aut Boyce, David E. 1940- Verfasser (DE-588)129417866 aut 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Baker, Russel Jacob 1964- Li, Harry W. Boyce, David E. 1940- CMOS circuit design, layout, and simulation CIRCUITOS INTEGRADOS larpcal Circuitos integrados - Disen̋o y construcción Semiconductores de metal-oxido complementarios - Disen̋o y construcción Transistores de efecto de campo metal-oxido semiconductores Integrated circuit layout Integrated circuits Design and construction Metal oxide semiconductor field-effect transistors Metal oxide semiconductors, Complementary Design and construction Schaltungsentwurf (DE-588)4179389-4 gnd CMOS (DE-588)4010319-5 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Simulation (DE-588)4055072-2 gnd Entwurf (DE-588)4121208-3 gnd MOS-FET (DE-588)4207266-9 gnd CMOS-Schaltung (DE-588)4148111-2 gnd |
| subject_GND | (DE-588)4179389-4 (DE-588)4010319-5 (DE-588)4027242-4 (DE-588)4055072-2 (DE-588)4121208-3 (DE-588)4207266-9 (DE-588)4148111-2 |
| title | CMOS circuit design, layout, and simulation |
| title_alt | CMOS |
| title_auth | CMOS circuit design, layout, and simulation |
| title_exact_search | CMOS circuit design, layout, and simulation |
| title_full | CMOS circuit design, layout, and simulation R. Jacob Baker, Harry W. Li and David E. Boyce |
| title_fullStr | CMOS circuit design, layout, and simulation R. Jacob Baker, Harry W. Li and David E. Boyce |
| title_full_unstemmed | CMOS circuit design, layout, and simulation R. Jacob Baker, Harry W. Li and David E. Boyce |
| title_short | CMOS circuit design, layout, and simulation |
| title_sort | cmos circuit design layout and simulation |
| topic | CIRCUITOS INTEGRADOS larpcal Circuitos integrados - Disen̋o y construcción Semiconductores de metal-oxido complementarios - Disen̋o y construcción Transistores de efecto de campo metal-oxido semiconductores Integrated circuit layout Integrated circuits Design and construction Metal oxide semiconductor field-effect transistors Metal oxide semiconductors, Complementary Design and construction Schaltungsentwurf (DE-588)4179389-4 gnd CMOS (DE-588)4010319-5 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Simulation (DE-588)4055072-2 gnd Entwurf (DE-588)4121208-3 gnd MOS-FET (DE-588)4207266-9 gnd CMOS-Schaltung (DE-588)4148111-2 gnd |
| topic_facet | CIRCUITOS INTEGRADOS Circuitos integrados - Disen̋o y construcción Semiconductores de metal-oxido complementarios - Disen̋o y construcción Transistores de efecto de campo metal-oxido semiconductores Integrated circuit layout Integrated circuits Design and construction Metal oxide semiconductor field-effect transistors Metal oxide semiconductors, Complementary Design and construction Schaltungsentwurf CMOS Integrierte Schaltung Simulation Entwurf MOS-FET CMOS-Schaltung |
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