Verfügbarkeit: Silicon heterojunction solar cells: analysis and basic understanding

Silicon heterojunction solar cells: analysis and basic understanding:

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Bibliographische Detailangaben
1. Verfasser:	Bivour, Martin (VerfasserIn)
Körperschaft:	Fraunhofer-Institut für Solare Energiesysteme (HerausgeberIn)
Format:	Abschlussarbeit Buch
Sprache:	English
Veröffentlicht:	Stuttgart Fraunhofer Verlag [2017]
Schriftenreihe:	Solar Energy and Systems Research
Schlagworte:	Amorpher Zustand Silicium ITO Dünne Schicht Heteroübergang Solarzelle Verlustleistung Elektronischer Transport Kontaktwerkstoff Transparent-leitendes Oxid PHV THX Elektronische Geräte und Materialien Physik der kondensierten Materie Flüssigkeits- und Festkörperphysik Angewandte Physik Technik Alternative Energie Erneuerbare Energie Hersteller von Silicium-Solarzellen Wissenschaftler Entwickler Halbleiter-Technologie Hochschulschrift
Online-Zugang:	Inhaltstext Inhaltsverzeichnis
Beschreibung:	XII, 253 Seiten Illustrationen, Diagramme
ISBN:	9783839611661

Internformat

MARC


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Datensatz im Suchindex

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adam_text	TABLE OF CONTENTS ABSTRACT. . . V ZUSAMMENFASSUNG.LX 1 INTRODUCTION.-1 - 1.1 MOTIVATION. -1 - 1.2 RESEARCH OBJECTIVES.- 3 - 1.3 OUTLINE. - 4 - 2 FUNDAMENTALS OF SOLAR CELL DEVICE PHYSICS. - 5 - 2.1 SEMICONDUCTOR EQUATIONS. - 5 - 2.2 RECOMBINATION PROCESSES.-8 - 2.3 FUNDAMENTAL CONSIDERATIONS ON THE EXCESS CARRIER EXTRACTION . -13 - 2.4 DIODE EQUATION AND J-VPARAMETERS. -16 - 2.5 ALTERNATIVES TO HOMOJUNCTIONS - BASIC CONCEPTS AND HISTORY . - 20 - 2.5.1 AMORPHOUS SILICON / CRYSTALLINE SILICON HETERO JUNCTION.- 30 - 2.6 CHAPTER SUMMARY. - 37 - 3 TECHNOLOGY, CHARACTERIZATION AND SIMULATION. - 39 - 3.1 TECHNOLOGY: PREPARATION OF SOLAR CELLS AND QSSPC AND SUNS-VOC SAMPLES . - 39 - 3.1.1 PROCESS FLOW.-3 9 - 3.1.2 DEPOSITION TOOL.- 42 - 3.2 CHARACTERIZATION.- 42 - 3.2.1 INTERPRETATION OF FILL FACTOR LOSSES.- 44 - 3.3 NUMERICAL DEVICE SIMULATIONS . . . - 45 - 4 RELEVANT DESIGN PARAMETERS FOR CARRIER SELECTIVE CONTACTS: A SIMULATION STUDY . - 47 4.1 CONTACT RECOMBINATION: HOMOJUNCTION VS. HETEROJUNCTION.-47 4.1.1 MOTIVATION. -48 4.1.2 SIMULATION DETAILS. - 48 4.1.3 SIMULATION RESULTS: HETEROJUNCTION VS. HOMOJUNCTION . - 51 4.1.4 CONCLUSION.- 54 4.2 BASIC ASPECTS FOR CARRIER SELECTIVE CONTACTS . - 55 4.2.1 MOTIVATION: NON-IDEAL VOLTAGE EXTRACTION.- 55 4.2.2 P/N-HOMOJUNCTION.- 60 4.2.3 MS CONTACT: AN INDUCED P/N HOMOJUNCTION. - 62 4.2.4 MIS LIKE CONTACT: A-SI:H BUFFER.- 65 4.2.5 CLASSICAL SHJ: A-SI:H DOPING AND TCO WORK FUNCTION.- 66 4.2.6 ROLE OF ELECTRIC FIELD. - 79 4.2.7 IMPORTANT BULK PARAMETERS FOR SEMICONDUCTOR BUFFER LAYERS . - 83 4.2.8 SELECTIVITY FROM AN ASYMMETRIC SURFACE RECOMBINATION VELOCITY . - 66 4.2.1 SELECTIVITY FROM AN ASYMMETRIC MOBILITIES AND HETERO-BARRIERS . - 88 4.3 CHAPTER SUMMARY.- 90 5 LIMIT OF THE INTERNAL VOLTAGE AT MPP AND OPEN-CIRCUIT CONDITIONS: CHEMICAL AND FIELD-EFFECT PASSIVATION OF THE ABSORBER.- 93 5.1 MOTIVATION.-93 5.2 SIMULATION: INFLUENCE OF INTERFACE DEFECTS AND ABSORBER . - 96 5.2.1 INPUT PARAMETERS AND QUALITATIVE INFLUENCE OF VARIABLES . - 97 5.2.2 SIMULATION RESULTS.-99 5.3 EXPERIMENTAL: INFLUENCE OF A-SI:H(I) THICKNESS AND CORONA CHARGE . -112 5.3.1 MOTIVATION. -112 5.3.2 DEVICE FABRICATION - SUITABLE DIELECTRIC CAPPING LAYER . -114 5.3.3 EXPERIMENTAL RESULTS.-115 5.3.4 CONCLUSION. . .-122 5.4 CHAPTER SUMMARY. .-123 6 CARRIER EXTRACTION FROM THE ABSORBER: REALIZATION AND EVALUATION OF DIFFERENT CARRIER SELECTIVE CONTACT SCHEMES . -125 - 6.1 A-SI:H DOPING VARIATION AS A SHOWCASE FOR A NON-IDEAL VOLTAGE EXTRACTION . -125 - 6.1.1 MOTIVATION.-126 - 6.1.2 ILLUMINATION-LEVEL DEPENDENCE OF OPEN-CIRCUIT VOLTAGE . -127 - 6.1.3 CORRELATION WITH THE FILL-FACTOR.-131 - 6.1.4 TEMPERATURE DEPENDENCE OF CELL PARAMETERS . -139 - 6.1.5 FURTHER INVESTIGATIONS AND REMARKS.-142 - 6.1.6 CONCLUSION. -146 - 6.2 INTERFACIAL ITO DOPING VARIATION: AN ATTEMPT TO MODIFY THE PARASITIC SCHOTTKY CONTACT-147 - 6.2.1 PROBING THE TUNABILITY OF THE EFFECTIVE WORK FUNCTION . -148 - 6.2.2 SHJ CELLS WITH MODIFIED HOLE AND ELECTRON SCHOTTKY CONTACT . -151 - 6.2.3 POSSIBLE ORIGINS OF THE FILL FACTOR LIMITATION . -154 - 6.2.4 CONCLUSION. -159 - 6.3 REPLACING THE TCO BY A METAL: AN APPROACH TO IMPROVE THE SCHOTTKY CONTACT ? . -160 - 6.3.1 MOTIVATION.-160 - 6.3.2 PROBING THE EFFECTIVE WORK FUNCTION.-162 - 6.3.3 LIMITED APPLICABILITY OF METAL FILMS AS CONTACT LAYERS . -167 - 6.3.4 HIGH EFFICIENCY HYBRID REAR EMITTER CELLS: ITO VS. METAL FILMS . -168 - 6.3.5 CONCLUSION.-170 - 6.4 CONTACT MATERIALS ADOPTED FROM ORGANIC ELECTRONICS.-171 - 6.4.1 MOTIVATION.-171 - 6.4.2 ASSESSING THE SUITABILITY OF DIFFERENT CONTACT MATERIALS . -172 - 6.4.3 SIS LIKE CELLS AND MODIFICATION OF THE PARASITIC SCHOTTKY CONTACT.-175 - 6.4.4 CONCLUSION.-182 - 6.5 CHAPTER SUMMARY. -185 - 7 LATERAL CARRIER TRANSPORT AT THE FRONT: MITIGATING THE ASSOCIATED LOSSES.-189 - 7.1 MOTIVATION.-189- 7.2 SIMULATION: FRONT VS. REAR EMITTER . -191 - 7.2.1 SIMULATION DETAILS. -191 - 7.2.2 COLLECTION OF ABSORBER'S MINORITY CARRIERS AT THE REAR EM ITTER.-193 - 7.2.3 IMPROVED 2D CARRIER COLLECTION FOR THE REAR EMITTER DESIGN.-197 - 7.2.4 FURTHER ASPECTS. - 204 - 7.3 SOLAR CELL RESULTS: FRONT VS. REAR EMITTER. - 211- 7.3.1 EXPERIMENTAL DETAILS. - 211 - 7.3.2 RESULTS. -211- 7.4 CHAPTER SUMMARY. - 216 - 8 SUMMARY AND OUTLOOK.- 217 - 8.1 SUMMARY. -217- 8.2 OUTLOOK.-221- 9 REFERENCES. - 223 - 10 PUBLICATIONS . . . . . . .- 247 - 11 ACKNOWLEDGEMENTS. - 253 -
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discipline	Maschinenbau / Maschinenwesen
format	Thesis Book
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spelling	Bivour, Martin Verfasser (DE-588)1129612244 aut Silicon heterojunction solar cells: analysis and basic understanding Martin Bivour Stuttgart Fraunhofer Verlag [2017] © 2017 XII, 253 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Solar Energy and Systems Research Dissertation Univ., Freiburg/Brsg. 2016 Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf ITO (DE-588)1101475064 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Heteroübergang (DE-588)4127243-2 gnd rswk-swf Solarzelle (DE-588)4181740-0 gnd rswk-swf Verlustleistung (DE-588)4187881-4 gnd rswk-swf Elektronischer Transport (DE-588)4210733-7 gnd rswk-swf Kontaktwerkstoff (DE-588)4165143-1 gnd rswk-swf Transparent-leitendes Oxid (DE-588)4618144-1 gnd rswk-swf PHV THX Elektronische Geräte und Materialien Physik der kondensierten Materie Flüssigkeits- und Festkörperphysik Angewandte Physik Technik Alternative Energie Erneuerbare Energie Hersteller von Silicium-Solarzellen Wissenschaftler Entwickler Halbleiter-Technologie (DE-588)4113937-9 Hochschulschrift gnd-content Solarzelle (DE-588)4181740-0 s Heteroübergang (DE-588)4127243-2 s Silicium (DE-588)4077445-4 s Amorpher Zustand (DE-588)4306087-0 s Dünne Schicht (DE-588)4136925-7 s Verlustleistung (DE-588)4187881-4 s Elektronischer Transport (DE-588)4210733-7 s Kontaktwerkstoff (DE-588)4165143-1 s Transparent-leitendes Oxid (DE-588)4618144-1 s ITO (DE-588)1101475064 s DE-604 Fraunhofer-Institut für Solare Energiesysteme (DE-588)2081865-8 edt Fraunhofer IRB-Verlag (DE-588)4786605-6 pbl X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=d8d746acef784619a38e6093abd6685e&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029666710&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Bivour, Martin Silicon heterojunction solar cells: analysis and basic understanding Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd ITO (DE-588)1101475064 gnd Dünne Schicht (DE-588)4136925-7 gnd Heteroübergang (DE-588)4127243-2 gnd Solarzelle (DE-588)4181740-0 gnd Verlustleistung (DE-588)4187881-4 gnd Elektronischer Transport (DE-588)4210733-7 gnd Kontaktwerkstoff (DE-588)4165143-1 gnd Transparent-leitendes Oxid (DE-588)4618144-1 gnd
subject_GND	(DE-588)4306087-0 (DE-588)4077445-4 (DE-588)1101475064 (DE-588)4136925-7 (DE-588)4127243-2 (DE-588)4181740-0 (DE-588)4187881-4 (DE-588)4210733-7 (DE-588)4165143-1 (DE-588)4618144-1 (DE-588)4113937-9
title	Silicon heterojunction solar cells: analysis and basic understanding
title_auth	Silicon heterojunction solar cells: analysis and basic understanding
title_exact_search	Silicon heterojunction solar cells: analysis and basic understanding
title_full	Silicon heterojunction solar cells: analysis and basic understanding Martin Bivour
title_fullStr	Silicon heterojunction solar cells: analysis and basic understanding Martin Bivour
title_full_unstemmed	Silicon heterojunction solar cells: analysis and basic understanding Martin Bivour
title_short	Silicon heterojunction solar cells: analysis and basic understanding
title_sort	silicon heterojunction solar cells analysis and basic understanding
topic	Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd ITO (DE-588)1101475064 gnd Dünne Schicht (DE-588)4136925-7 gnd Heteroübergang (DE-588)4127243-2 gnd Solarzelle (DE-588)4181740-0 gnd Verlustleistung (DE-588)4187881-4 gnd Elektronischer Transport (DE-588)4210733-7 gnd Kontaktwerkstoff (DE-588)4165143-1 gnd Transparent-leitendes Oxid (DE-588)4618144-1 gnd
topic_facet	Amorpher Zustand Silicium ITO Dünne Schicht Heteroübergang Solarzelle Verlustleistung Elektronischer Transport Kontaktwerkstoff Transparent-leitendes Oxid Hochschulschrift
url	http://deposit.dnb.de/cgi-bin/dokserv?id=d8d746acef784619a38e6093abd6685e&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029666710&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT bivourmartin siliconheterojunctionsolarcellsanalysisandbasicunderstanding AT fraunhoferinstitutfursolareenergiesysteme siliconheterojunctionsolarcellsanalysisandbasicunderstanding AT fraunhoferirbverlag siliconheterojunctionsolarcellsanalysisandbasicunderstanding

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