Proceedings of the Eighth International Conference on Narrow Gap Semiconductors: Shanghai, China, 21 - 24 April 1997
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
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Singapore [u.a.]
World Scientific
1998
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIX, 472 S. Ill., graph. Darst. |
| ISBN: | 9810233442 |
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| 246 | 1 | 3 | |a Narrow gap semiconductors |
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PROCEEDINGS OF THE EIGHTH INTERNATIONAL CONFERENCE ON
SHANGHAI, CHINA 21-24APRIL 1997
EDITORS
S C SHEN, DY TANG & G Z ZHENG NATIONAL LABORATORY FOR INFRARED PHYSICS
SHANGHAI INSTITUTE OFTECHNICAL PHYSICS CHINESE ACADEMY OFSCIENCES
SHANGHAI, CHINA
G BAUER
JOHANNES KEPLER UNIVERSITAT LINZ LINZ, AUSTRIA
VF
UNIVERSITATSBIBLIOTHEK HANNOVER TECHN1SCHE INFORMATIONSBIBLIOTHEK
WORLD SCIENTIFIC SINGAPORE * NEW JERSEY LONDON * HONGKONG
IMAGE 2
CONTENTS
IX
PREFACE V
ORGANIZING COMMITTEE VII
1 MATERIALS AND RELATED PHYSICS
MAGNETIC FIELD AND DIMENSIONALITY INDUCED POPULATION EFFECTS IN HGSE
ANDHGSE:FE (INVITED) 1
O. PORTUGALL, G. MACHEL, M. BARCZEWSKI, S. LUTHER, M.V. ORTENBERG, D.
SCHIKORA, T. WIDMER AND K. LISCHKA
GROWTH AND IN SITU SCANNING TUNNELING MICROSCOPY STUDIES OF IV-VI
SEMICONDUCTORS (INVITED) (ABSTRACT) 11
G. SPRINGHOLZ
THE EXCESS CARRIER LIFE TIMES IN MCT HETEROSTRUCTURES GROWN
BY MBE 12
S.A. BULDYGIN, A.F. BULDYGIN, VS. VARAVIN, S.A. DVORETSKY,
N.N. MIKHAILOV, M. V. YAKUSHEV AND YU. G. SIDOROV
A STUDY ON THE INTERFACE OFCDTE/HGCDTE GROWNBY MOCVD 16 715. LEE, Y.T.
JEOUNG, H.K. KIM, J.M. KIM, J.H. SONG, Y.H. KIM,
S.U. KIM, M.J. PARK ANDS.H. SUH
ELECTRICAL PROPERTIES OF ROOM-TEMPERATURE MBE CDTE/HGCDTE INTERFACES 20
/. ZHAO, H.Q. LU, YD. ZHOU, S.P. GUO ANDJ.X. FANG
THE CONDUCTANCE MECHANISMS OF HGO.53CDO.47TE/CDTE INTERFACE 24 X.C.
ZHANG, G.Z. ZHENG, Y.S. GUI, S.L. GUO ANDJ.H. CHU
DEFECTS IN MBE-GROWN LAYERS OF CDHGTE 30
E.V. FEDOSENKO, S.P. SUPRUN, M.A. TORLIN, VS. VARAVIN
AND S.A. DVORETSKY
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X
INFLUENCES OF OPTICAL PHONONS ON THE OPTOELECTRONIC TRANSITIONS IN A
HG^MG^TE TERNARY MIXED CRYSTAL 34
CM. HU, Z.H. CHEN, W.G. TANG, B. ZHANG, G.L. SHI, PL. LIU, W. LU, S.C.
SHEN, 5. OEHLING, C.R. BECKERAND G. LANDWEHR
RAMAN STUDY OF CDHGTE MBE LAYERS 38
A.B. TALOCHKIN, VS. VARAVIN, S.A. DVORETSKIY AND YU.G. SIDOROV
ANOMALOUS ABSORPTION SPECTRA FOR HGI_J.CDJTE EPITAXIAL FILMS 42 BIAO LI,
Y.S. GUI, H.J. YE AND J.H. CHU
THE STUDY ON THE NEGATIVE DIFFERENTIAL RESISTANCE AND SURFACE STATES OF
HGKVCD;TE MIS STRUCTURES 46
J.K. HONG, Y.C. CHUNG, I.J. KIM, D.Y. SHIN, U.S. IM, E.S. KIM, I.S.
CHOI, S.U. KIM AND M.J. PARK
VARIABLC-MAGNETIC-FIELD-HALL EFFECT DEPENDENCE IN HGCCLTE
GROWN BY MBE 52
O.A. SHEGAI, VS. VARAVIN, S.A. DVORETSKY, N.N. MIKHAILOV, A.M. PALKIN,
YU.G. SIDOROV AND M.V. YAKUSHEV
ANOMALOUSLY HIGH MOBILITY IN -TYPE HGCDTE 56
S.K. LIAO, YAN YANG AND X.J. LIU
OPTICAL AND ELECTRICAL INVESTIGATION ON FE IMPURITY BEHAVIOR
IN HGCDTE 60
Y. CHANG, J.H. CHU, W.G. TANG, W.Z. SHEN, D.Y. TANG,
R.Q. YE AND J.X. FANG
SURFACE RECOMBINATION MECHANISMS IN N-TYPC NARROW GAP MERCURY CADMIUM
TELLURIDE 64
H.M. GONG, J.X. FANGAND D.Y. TANG
HGI-JCDXTE ON SAPPHIRE AND SILICON STRUCTURES GROWN BY ISO-VPE 70
5. BERNARDI
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ELECTRICAL PROPERTIES OFP-TYPE HGZNTE SCHOTTKY BARRIER DIODE WITH AU
ANDAL 77
K.H. KIM, S.D. LEE, K.N. OH, J.K. HONG, Y.C. CHUNG, S.U. KIM, M.J. PARK,
T.S. LEE ANDJ.M. KIM
GROWTH AND ANNEALING OFCDI^ZN^TE CRYSTAL 83
Y.D. MO, Q.L. YUE, HUT HUANG, GANG WU, Y.C. HE, YI LI, HUA CHEN AND C.
W. LIU
X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDIES OFCDZNTE SUBSTRATE 87 HUI
HUANG, GANG WU, Y.C. HE, Y.D. MO, C.H LEIAND C.W. LIU
WEAK LOCALIZATION AND METAL-TO-INSULATOR TRANSITION IN PBEUTE 93 Y.
UETA, A. PRINT, G. SPRINGHOLZ, G. BRUNTHALER, G. BAUER,
G. GRABECKI AND T. DIETL
STRUCTURAL AND ELECTRONIC PROPERTIES OF SANDWICHED
HGSE-QUANTUM WELLS 97
H. WISSMANN, L. PARTHIER, G. MACHEL, S. LUTHER, M. SCHMIDBAUER, R.
KDHLERAND M.V. ORTENBERG
MBE GROWTH OFPBEUSE ON CAF2/SI(LLL) 101
X.M. FANG, I.-N. CHAO, B.N. STRECKER, P.J. MCCANN, SHU YUAN, W.K. LIU
ANDM.B. SANTOS
GROWTH OF INAS-RICHGALNASSB ALLOYS BY MOCVD 105
Y.Q. NING, T.M. ZHOU, B.L. ZHANG, HONG JIANG,
S. W. LI, GUANG YUAN, YUAN TIAN AND Y.X. JIN
STUDY OF GALNASSB ALLOY ON GASB SUBSTRATE BY ATOMIC FORCE
MICROSCOPY 109
S.W. LI, Y.Q. NING, B.L. ZHANG, T.M. ZHOU, HONG JIANG, GUAN YUAN, YUAN
TIAN, Y.X. JIN, C.X. GAO ANDZ.S. JIN
ANODIC-OXIDE-INDUCED INTERDIFFUSION IN GAAS/ALGAAS QUANTUM WIRE
STRUCTURE GROWN ON V-GROOVED SUBSTRATE 113
SHU YUAN, YONG KIM, C. JAGADISH, L.V DAO, P.T. BURKE, M. GAL, J. ZOU AND
D.J.H. COCKAYNE
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PREPARATION OF SILICONFILM FOR VISIBLE LUMINESCENCE AT
ROOM TEMPERATURE 119
M.F. WAN, X.Q. LIU, X.S. CHEN, WEILU, S.C. SHEN, KM. YUAN, Y.L.
HEANDX.W. WEI
STM INVESTIGATION ON FRACTAL CHARACTERISTIC OF SILICONFILM 123 M.F. WAN,
X.Q. LIU, X.S. CHEN, WEILU, S.C. SHEN, K.H. YUAN, Y.L. HEANDXW. WEI
1.54UM PHOTOLUMINESCENCE OF ERBIUM AND OXYGEN CODOPED SILICON GROWN BY
MOLECULAR BEAM EPITAXY 127
JUN WAN, CHI SHENG, FANG LU, D. W. GONG, Y.L. FAN, FENG LIN AND XUN WANG
2 DETECTORS AND ARRAYS
CHINA S SATELLITE PROJECT FOR EARTH OBSERVATION AND INFRARED DETECTION
(INVITED) 131
D.B. KUANG
RECENT PROGRESS IN QUANTUM WELL INFRARED PHOTODETECLORS AND FOCAL PLANE
ARRAYS FOR LWIR IMAGING APPLICATIONS (INVITED) 139 S.S. LI
RECENT PROGRESS ON MULTICOLOR QUANTUM WELL INFRARED PHOTODETCCTORS
(INVITED) (ABSTRACT) 155
M.M.Z. TIDROW
THE LINEAR PHOTOCONDUCTOR ARRAYS BASED ON HGCDTE HETEROSTRUCTURES GROWN
BY MBE 156
A.G. KLIMENKO, A.E. KLIMOV, V.V SOLDATENKOVA, M.A. TORLIN, E. V
FEDOSENKO, VN. SHUMSKY, VS. VARAVIN, S.A. DVORETSKY, N.N. MIKHAILOV,
M.V. YAKUSHEVAND YU.G. SIDOROV
LWIR FOCAL PLANE ARRAY B ASED ON MBE HGCDTE FILMS 160
D.G. ESAEV, A.G. KLIMENKO, A.I. KOZLOV, A.I. KRYMSKY, I.V. MARCHISHIN,
V.N. OVSYUK, L.N. ROMASHKO, A.O. SUSLYAKOV, N.KH. TALIPOV, V.V.
VASILIEV, T.I. ZAKHARYASH, YU.G. SIDOROV, S.A. DVORETSKY, VS. VARAVIN
AND N.N. MIKHAILOV
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MULTIELEMENTDEEP COOLING PHOTOSENSITIVE DEVICES FOR SPECTRAL RANGE UP TO
20 MICRONS BASED ON IN-DOPED PBSNTE FILMS FOR SPACE RESEARCH 164
A.E. KLIMOV, A.G. KLIMENKO, I.G. NEIZVESTNYI, A.A. FRANTSUZOV AND V.N.
SHUMSKY
OPTICAL AND ELECTRICAL PROPERTIES OF INAS/GAJ^IN^SB
PHOTODIODES FOR INFRARED DETECTION 168
F. FUCHS, W. PLETSCHEN, U. WEIMAR, J. SCHMITZ, M. WALTHER,
J. WAGNER AND P. KOIDL
STRUCTURAL AND PHOTOELECTRIC STUDIES ON DOUBLE BARRIER QUANTUM
WELL IR DETECTORS 172
D.S. JIANG, L.Q. CUI, W.G. WU, C.Y. SONG, Y.H. ZHANG, Y. ZHUANG, Y.T.
WANG ANDR.Z. WANG
NORMAL-INCIDENCE ABSORPTION OF N-TYPE STEP GAALSB QUANTUM WELL 176 W.L.
XU, Y.M. MU, S C. SHEN, Y. FU AND M. WILLANDER
THEORETICAL INVESTIGATION OF ALAS/ALGAAS X-VALLEY QUANTUM-WELL
NORMAL-INCIDENT INFRARED DETECTORS 180
Y.M. MU, W.L. XU, Y. FU AND M. WILLANDER
3 INFRARED LASERS
INTERBAND CASCADE LIGHT EMITTING DEVICES BASED ON TYPE-II
QUANTUM WELLS (INVITED)
184
R.Q. YANG, C.-H LIN, S.J. MURRY, D. ZHANG, S.S. PEI,
A.A. ALLERMAN, S.R. KURTZ, E. DUPONT, H. C. LIUANDM. BUCHANAN
MID-INFRARED RESONANT-CAVITY-BASED DEVICES; OF DETECTORS AND
EMITTERS (INVITED)
194
J. BLEUSE, J.-L. PAUTRAT, E. HADJI, G. MULA ANDN. MAGNEA
W LASERS FOR THEMID-IR (INVITED) 204
JR. MEYER, C.L. FELIX, I. VURGAFTMAN, WW. BEWLEY, J.R. LINDLE, C.-H.
LIN, 5.7. MURRY, D. ZHANG, R.Q. YANG ANDS.-S. PEI
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ABSORPTION AND REFRACTIVE INDEX OFPBSE/PBEUSE MULTIQUANTUM WELL LASER
214
Y. LUO, G. BAUER, M. KRIECHBAUM, Z. SHI, A. GAYMANN AND M. TACKE
ELECTRON RAMAN INFRARED LASERBASED ON INTERSUBBAND
TRANSITIONS IN COUPLED QUANTUM WELLS 218
G. SUN AND J.B. KHURGIN
LASER GENERATION IN ALGAAS/GAAS LIGHT-EMITTINGTUNNEL DIODE
ENHANCED BY APERIODIC-SUPERLATTICEINJECTORS 223
S.M. CAO, M. WILLANDER, A.A. TOROPOV, T.V SHUBINA,
A.V. LEBEDEV, B. YA. MEL TSER, PS. KOP EV, T. LUNDSTROM,
P.O. HOLTZ, J-P. BERGMAN ANDB. MONEMAR
4 DEVICES AND RELATED PHYSICS
OPTOELECTRONIC DEVICES FROM INDIUM ALUMINIUM ANTIMONIDC
AND MERCURY CADMIUM TELLURIDE (INVITED) 227
T. ASHLEY
THREE-TERMINAL SUPERCONDUCTOR-SEMICONDUCTORDEVICES (INVITED) 238 H.
TAKAYANAGI AND T. AKAZAKI
LOW-DIMENSIONAL ELECTRON TRANSPORT AND DEVICE APPLICATIONS OF INAS
HETEROSTRUCTURES (INVITED) (ABSTRACT) 248
M. INOUE AND S. SASA
NARROW-GAP SEMICONDUCTOR HALL SENSORS FOR READ-HEADS IN MAGNETIC
RECORDING 249
S.A. SOLIN, R.A. STRADLING, T. THIOAND J. W. BENNETT
GENERATION OF HYPERSONIC PHONON EMISSION FROM THZ-DRIVEN TWO-DIMENSIONAL
ELECTRON GASES 253
W. XU AND C. ZHANG
MAGNETO-TUNNEL DIODE BASED ON ZERO-GAP SEMICONDUCTORS
HGTEANDHG0.9CD0.ITE 257
M. KUBISA AND W. ZAWADZKI
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MERCURY CADMIUM TELLURIDE AS READ-HEAD SENSORS FOR HIGH-DENSITY MAGNETIC
RECORDING 261
T. THIO, S.A. SOLIN, J.W. BENNETT, D.R. HINES, M. KAWANO, N. ODA AND M.
SANO
A NOVEL WAY TO DETERMINE THE ELECTRICAL PARAMETERS FOR TWO-TERMINAL
HG^CD^TE DEVICE 265
Y.S. GUI, B. LI, G.Z. ZHENG, J.H. CHU AND YI CAI
5 PHYSICS
5.1 MAGNETOTRANSPORT AND MAGNETO-OPTICAL PROPERTIES
COHERENT ANTI-STOKES RAMAN SCATTERING IN DILUTED MAGNETIC IV-VI
EPILAYERS AND SUPERLALTICES (INVITED) 269
H. PASCHER, F. GEIST, G. SPRINGHOLZ, N. FRANK, G. BAUER ANDM. KRIECHBAUM
HIGH FIELD CYCLOTRON RESONANCE IN GASB AND EFFECTIVEMASS AT THE T AND
L-POINTS (INVITED) 279
H. ARIMOTO, N. MIURA, R.J. NICHOLAS AND C. HAMAGUCHI
SPIN AND DEPOLARIZATION EFFECTS IN INAS/ALSB QUANTUM WELLS (INVITED) 289
W. ZAWADZKI, M. KUBISA, A. WIXFORTH, C. GAUER, J.P. KOTTHAUS, B. BRAR
AND H. KROEMER
PHASECOHERENT TRANSPORT IN PBTE WIDE PARABOLIC QUANTUM WELLS 300 J.
OSWALD, G. SPAN, A. HOMER, G. HEIGL, P. GANITZER,
D.K. MAUDE ANDJ.C. PORTAL
EDGE CHANNEL DOMINATED MAGNETOTRANSPORT IN PBTE WIDE PARABOLIC QUANTUM
WELLS 304
/. OSWALD, G. SPAN, A. HOMER, G. HEIGL, P. GANITZER,
D.K. MAUDE AND J. C. PORTAL
LANDAU LEVEL LIFETIMES IN PBTE WIDE PARABOLIC QUANTUM WELLS 308 C.J.G.M.
LANGERAK, J. OSWALD, B.N. MURDIN, M. KAMAL-SAADI, G. BAUER, CM. CIESLA
AND C.R. PIDGEON
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DENSITY DEPENDENCE OF THE SPIN-SPLITTING OF THE CYCLOTRON RESONANCE IN
INAS/ALSB QUANTUM WELLS 312
A. WIXFORTH, J. SCRIBA, A. SIMON, C.R. BOLOGNESI, B. BRAR AND H. KROEMER
LO-PHONON BOTTLENECK EFFECTS IN A MAGNETICALLY CONFINED INGAAS/INALAS
TRIPLE BARRIER RESONANT TUNNELING DIODE 316 Y. AWANO, C. WIRNER, N.
YOKOYAMA, M. OHNO, N. MIURA,
T. NAKAGAWA AND H. BANDO
CYCLOTRON RESONANCE OF INASI^SB^EPILAYERS AND
INAS/INASJ^SB^SUPERLATTICES 320
R.A. STRADLING, W.T. YUEN, N. MIURA AND H. ARIMOTO
AN INVESTIGATION OF SPIN-ORBIT INTERACTIONS AND CONDUCTION BAND
NONPARABOLICITY IN GATED INAS/GASB QUANTUM WELL STRUCTURES 324 J. NEHLS,
T. MALIK, R.A. STRADLING, W.T. YUEN, S.J. CHUNG AND A.G. NORMAN
STUDY OF CYCLOTRON RESONANCE AND MAGNETO-PHOTOLUMINESCENCE OF N-TYPE
MODULATION-DOPED INGAAS QUANTUM WELL LAYERS AND THEIR CHARACTERIZATIONS
328
N. KOTERA, E.D. JONES, K. TANAKA, H. ARIMOTO, M. OHNO, N. MIURA, T.
MISHIMA, Y. SHIMAMOTO, M. KOMORIAND K. HIGUCHI
MAGNETO-OPTICAL STUDY ON ELECTRON GASES POPULATING TWO SUBBANDS IN
PSEUDOMORPHIC INGAAS/INALAS GRADED HETEROSTRUCTURES 332 Z.H. CHEN, CM.
HU, Y.S. GUI, G.L. SHI, P.L. LIU, S.C. SHEN, J.X. CHEN ANDA.Z. LI
5.2 ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES
SEMICONDUCTOR INTER-SUBBAND AND INTERBAND LIFETIME STUDIES WITH FELIX
(INVITED) 336
C.R. PIDGEON, CM. CIESLA, B.N. MURDIN AND C.J.G.M. LANGERAK
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MAGNETIC INTERACTIONS IN SNI^GD^TE SEMIMAGNETIC SEMICONDUCTOR
(INVITED) 345
7:5TORY
A STUDY ON THEANODIC OXIDE FILMS OF PASSIVATED HG^ZNJTE USING RAMAN
SCATTERING AND C-V ANALYSIS 354
Y.H. KIM, S.U. KIM, T.S. LEE, K.N. OH ANDM.J. PARK
RECOMBINATION INPBI^SN^TE (IN) AT LOW TEMPERATURES 361
V.V BORODIN, A.E. KLIMOVAND V.N. SHUMSKY
PHOTOCURRENT OSCILLATIONS IN PBI^SN^TE (IN) FILMS 365
V.V. BORODIN, A.E. KLIMOV AND V.N. SHUMSKY
INVESTIGATION OF INTERSUBBAND TRANSITIONS IN GAAS/GAALAS
MULTI-QUANTUM WELLS UNDER HYDROSTATIC PRESSURE
369
N. DAI, D. HUANG, X.Q. LIU, Y.M. MU, W. LU AND S. C. SHEN
THE QUANTUM INTERFERENCE ON THE STATES ABOVEALGAAS QUANTUM STEP 373 W.
LU, Y.M. MU, X.Q. LIU, X.S. CHEN, M.F. WANAND S.C. SHEN
PHOTOLUMINESCENCE OF INAS/GAAS SUBMONOLAYER STRUCTURE
UNDER HYDROSTATIC PRESSURE
379
G.H. LI, H.X. HAN, Z.P. WANG, W. LI ANDZG. WANG
IN-SITU OPTICAL STUDY ON ELECTRON ENERGY LEVEL IN A SURFACE SI
A-DOPING LAYER ON GAAS(OOL)
383
X.S. CHEN, X.Q. LIU, M.F. WAN, W. LU, G.L. SHI, Y.M. MU,
L.P. YAN, Y.M. QIAO AND S.C. SHEN
PHOTOCONDUCTIVITY SPECTROSCOPY OF INAS/ALSB QUANTUM WELLS 387
M. HARTUNG, A. WIXFORTH, J.P KOTTHAUS, M. THOMAS, B. BRAR
AND H. KROEMER
STUDIES ON TRANSPORT PROPERTIES OF 3D AND 2D SYSTEMS OF
NARROW-GAP SEMICONDUCTORS BY CAPACITANCE SPECTROSCOPY 391
K. LIU, J.H. CHU, S.L. GUO, Y. CAI, G.Z. ZHENG, D.Y. TANG
AND L.J. WU
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ELECTRIC-FIELD AND MAGNETIC-FIELD DEPENDENCE OF INTERSUBBAND
RELAXATION TIME IN WIDE QUANTUM WELLS 395
K.J. LUO, Y.Z. CHEN, Y. JI, Y.X. LI, C.F. LI, W.C. CHENG, Z.D. LU,
J.Z. XU, Z. Y. XU ANDHZ. ZHENG
IN-SITU PR STUDY OFALGAAS/GAAS SURFACE QW 399
X.Q. LIU, X.S. CHEN, W. LU, G.L. SHI, M.F. WAN, Y.M. MU,
L.P. YAN, Y.M. QIAO AND S.C. SHEN
MINIBAND TRANSPORT IN DOPEDGAAS SUPERLATTICES DRIVEN BY INTENSE FAR
INFRARED RADIATIONS 403
X.L. LEI
BREAKDOWN OF NEGATIVE DIFFERENTIAL VELOCITY IN HOLE MINIBAND TRANSPORT
OF GAAS-BASED SUPERLATTICES DUE TO ENERGY-BAND MIXING 407
B. DONG AND X.L. LEI
THE INFRARED VIBRATIONAL MODES OF THE SOLITON-ANLISOLITON PAIR
IN SEMICONDUCTING POLYMERS 411
R.L. FU, J.H. CHU, MM. LEE, H. ZHAO, L. LI AND X. SUN
INFLUENCE OF AN IN-PLANE ELECTRIC FILED ON POPULATION INVERSION
AMONG ELECTRONIC SUBBANDS IN OPTICALLY PUMPED SEMICONDUCTOR QUANTUM WELL
STRUCTURES 415
W. XU AND C. ZHANG
6 QUANTUM DOTS
GROWTH AND CHARACTERIZATION OF INAS QUANTUM DOTS (INVITED) 419 N.N.
LEDENTSOV
SELF-ASSEMBLED INAS QUANTUM BOXES: GROWTH, INTRINSIC PROPERTIES,
POTENTIAL APPLICATIONS (INVITED) (ABSTRACT) 435
J.M. GERARD
SELF-ORGANIZED GERMANIUM QUANTUM DOTS GROWN BY MOLECULAR BEAM EPITAXY ON
SILICON 436
Z.M. JIANG, H.J. ZHU, FANG LU ANDXUN WANG
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NOVEL GE SELF-ORGANIZED QUANTUM DOTS IN SI 440
C.S. PENG, Q. HUANG, YM. ZHANG, W.Q. CHENG, T.T. SHENG, CM. TUNGANDJ.M.
ZHOU
VERTICALLY COUPLED MULTILAYERS OF SELF-ASSEMBLED INAS QUANTUM DOTS 446
Z.M. WANG, Y.M. DENG, S.L. FENG, Z.D. LU, G.R. LI, Z.G. CHEN, ZY.XU, HZ.
ZHENG, F.L. WANG, M. GAO, P.D. HAN ANDXF. DUAN
HIGH DENSITY SELF-ASSEMBLED INSB/ALGASB QUANTUM DOT GROWTH USING
MOLECULAR BEAM EPITAXY 450
M. YANO, Y. SEKI, T. IKEDA, S. SASA AND M. INOUE
THE SELF-ORGANIZED INO.24GAO.76AS QUANTUM DOTS GROWN BY MIGRATION
ENHANCED EXPITAXY 454
W.Q. CHENG, Z.Y. ZHONG, Y. WU, Q. HUANG ANDJ.M. ZHOU
ANNEALING BEHAVIOR OF SELF-ASSEMBLED INAS QUANTUM DOTS IN A GAAS MATRIX
458
Z.M. WANG, S.L. FENG, Z.D. LU, Q. ZHAO, X.P. YANG, Z.G. CHEN, Z.Y. XU
ANDHZ. ZHENG
PHOTOLUMINESCENCE STUDY ON SELF-ORGANIZED INAS QUANTUM DOTS STRUCTURE
462
Z.D. LU, Z.L. YUAN, X.P. YANG, J.Z. XU, B.Z. ZHENG, Z.Y. XU, Y. WANG, J.
WANG AND W.K. GE
AUTHOR INDEX 467
|
| any_adam_object | 1 |
| author_corporate | International Conference on Narrow Gap Semiconductors Schanghai |
| author_corporate_role | aut |
| author_facet | International Conference on Narrow Gap Semiconductors Schanghai |
| author_sort | International Conference on Narrow Gap Semiconductors Schanghai |
| building | Verbundindex |
| bvnumber | BV012781714 |
| callnumber-first | Q - Science |
| callnumber-label | QC611 |
| callnumber-raw | QC611.8.N35 |
| callnumber-search | QC611.8.N35 |
| callnumber-sort | QC 3611.8 N35 |
| callnumber-subject | QC - Physics |
| classification_rvk | UP 3100 |
| ctrlnum | (OCoLC)39328305 (DE-599)BVBBV012781714 |
| dewey-full | 537.6/22 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6/22 |
| dewey-search | 537.6/22 |
| dewey-sort | 3537.6 222 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Conference Proceeding Book |
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C.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">GBV Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008693139&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008693139</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1997 Schanghai gnd-content |
| genre_facet | Konferenzschrift 1997 Schanghai |
| id | DE-604.BV012781714 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:33:35Z |
| institution | BVB |
| institution_GND | (DE-588)5305828-8 |
| isbn | 9810233442 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008693139 |
| oclc_num | 39328305 |
| open_access_boolean | |
| owner | DE-703 DE-355 DE-BY-UBR |
| owner_facet | DE-703 DE-355 DE-BY-UBR |
| physical | XIX, 472 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | World Scientific |
| record_format | marc |
| spelling | International Conference on Narrow Gap Semiconductors 8 1997 Schanghai Verfasser (DE-588)5305828-8 aut Proceedings of the Eighth International Conference on Narrow Gap Semiconductors Shanghai, China, 21 - 24 April 1997 ed. S. C. Shen ... Narrow gap semiconductors Singapore [u.a.] World Scientific 1998 XIX, 472 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier CONFERENCES nasat SEMICONDUCTOR DEVICES nasat SEMICONDUCTOR JUNCTIONS nasat SEMICONDUCTORS (MATERIALS) nasat Narrow gap semiconductors Congresses Narrow-Gap-Halbleiter (DE-588)4238102-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1997 Schanghai gnd-content Narrow-Gap-Halbleiter (DE-588)4238102-2 s DE-604 Shen, S. C. Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008693139&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Eighth International Conference on Narrow Gap Semiconductors Shanghai, China, 21 - 24 April 1997 CONFERENCES nasat SEMICONDUCTOR DEVICES nasat SEMICONDUCTOR JUNCTIONS nasat SEMICONDUCTORS (MATERIALS) nasat Narrow gap semiconductors Congresses Narrow-Gap-Halbleiter (DE-588)4238102-2 gnd |
| subject_GND | (DE-588)4238102-2 (DE-588)1071861417 |
| title | Proceedings of the Eighth International Conference on Narrow Gap Semiconductors Shanghai, China, 21 - 24 April 1997 |
| title_alt | Narrow gap semiconductors |
| title_auth | Proceedings of the Eighth International Conference on Narrow Gap Semiconductors Shanghai, China, 21 - 24 April 1997 |
| title_exact_search | Proceedings of the Eighth International Conference on Narrow Gap Semiconductors Shanghai, China, 21 - 24 April 1997 |
| title_full | Proceedings of the Eighth International Conference on Narrow Gap Semiconductors Shanghai, China, 21 - 24 April 1997 ed. S. C. Shen ... |
| title_fullStr | Proceedings of the Eighth International Conference on Narrow Gap Semiconductors Shanghai, China, 21 - 24 April 1997 ed. S. C. Shen ... |
| title_full_unstemmed | Proceedings of the Eighth International Conference on Narrow Gap Semiconductors Shanghai, China, 21 - 24 April 1997 ed. S. C. Shen ... |
| title_short | Proceedings of the Eighth International Conference on Narrow Gap Semiconductors |
| title_sort | proceedings of the eighth international conference on narrow gap semiconductors shanghai china 21 24 april 1997 |
| title_sub | Shanghai, China, 21 - 24 April 1997 |
| topic | CONFERENCES nasat SEMICONDUCTOR DEVICES nasat SEMICONDUCTOR JUNCTIONS nasat SEMICONDUCTORS (MATERIALS) nasat Narrow gap semiconductors Congresses Narrow-Gap-Halbleiter (DE-588)4238102-2 gnd |
| topic_facet | CONFERENCES SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SEMICONDUCTORS (MATERIALS) Narrow gap semiconductors Congresses Narrow-Gap-Halbleiter Konferenzschrift 1997 Schanghai |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008693139&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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